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Frequency-Dependent Complex Conductivities and Dielectric Responses of Indium Tin Oxide Thin Films From the Visible to the Far-Infrared

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6 Author(s)
Ching-Wei Chen ; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan ; Yen-Cheng Lin ; Chia-Hua Chang ; Peichen Yu
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Transparent and conducting indium tin oxide (ITO) thin films form an integral part for various optoelectronic devices. In this paper, we report the frequency-dependent complex conductivities and dielectric responses of several sputtered ITO thin films with thicknesses in the range of 189-962 nm by using terahertz time domain spectroscopy (THz-TDS), optical reflectance spectroscopy, and electrical measurements. The plasma frequencies are verified to be from 1590 to 1930 rad·THz, while the scattering times are in the range 6-7 fs based on the Drude free-electron model. The mobilities of the above ITO thin films are calculated to be 32.7-34.2 cm2 V-1 s-1, whereas the carrier concentrations lie in the range 2.79-4.10× 1020 cm-3. The electrical properties derived from the THz-TDS technique agree well with those determined by Hall measurement. Parameters for the complex dielectric function suitable for ITO in the range 0.2-2 and 4-450 THz are also determined.

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IEEE Journal of Quantum Electronics  (Volume:46 ,  Issue: 12 )