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Deep trenches for device insulation in a high-voltage process in thick SOI were fabricated using different manufacturing technologies. The trenches have been investigated by current-voltage-characteristics. In comparison to the conventional produced trenches alternatively fabricated samples reach a remarkable increase of the breakdown voltages accompanied by a decline of the leakage current in the order of several magnitudes. Respecting other process parameters a trench fabrication method has been selected which enables the manufacturing of reliable single trenches suitable for operating voltages up to 650 V. The new trench can be implied within a prospective X-FAB process. A reduction of area consumption is possible in many designs by replacing double trenches by single trenches. The future high-voltage X-FAB process will include new primitive devices which are currently designed and characterized. In this work new diode types with characteristic properties are presented.