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A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain

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4 Author(s)
de Langen, K.J. ; Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands ; Eschauzier, R.G.H. ; van Dijk, G.J.A. ; Huijsing, J.H.

A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-Ω load is presented. The equivalent input noise voltage is as low as 1.2 nV/√Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz fT n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm2 and has been realized in the bipolar part of a 1-μm BiCMOS process

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 4 )