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Improved infrared thermal imaging of a CMOS MEMS device

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5 Author(s)
Hopper, R.H. ; Fac. of Technol., De Montfort Univ., Leicester, UK ; Haneef, I. ; Ali, S.Z. ; Udrea, F.
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We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical-Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO2 membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved.

Published in:

Thermal Investigations of ICs and Systems (THERMINIC), 2010 16th International Workshop on

Date of Conference:

6-8 Oct. 2010