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Systematic Modeling and Characterization of a Via-to-SIW Transition

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2 Author(s)
Miguel A. Tlaxcalteco-Matus ; Department of Electronics, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Tonantzintla, Puebla, Mexico ; Reydezel Torres-Torres

A model and parameter extraction method for a via-to-SIW transition is presented. The model is derived from an analysis of experimental data and full-wave simulations, allowing to obtain the equivalent circuit parameters for the via including its interaction with the SIW. It is demonstrated through a careful model-experiment correlation that the application of this method allows the correct representation of the via-to-SIW transitions implemented on printed circuit board technology even when changing the structure of the SIW environment.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:20 ,  Issue: 12 )