Cart (Loading....) | Create Account
Close category search window

Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Peng, J.W. ; Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore, Singapore ; Singh, N. ; Lo, G.Q. ; Bosman, M.
more authors

This work presents a complementary metal-oxide-semiconductor-compatible top-down fabrication of Ge nanowires along with their integration into pMOSFETs with "HfO2/TaN" high-k/metal gate stacks. Lateral Ge wires down to 14 nm in diameter are achieved using a two-step dry etch process on a high-quality epitaxial Ge layer. To improve the interface quality between the Ge nanowire and the HfO2, thermally grown GeO2 and epitaxial-Si shells are used as interlayers. Devices with a GeO2 shell demonstrated excellent ION/IOFF ratios (>; 106), whereas the epitaxial-Si shell was found to improve the field-effect mobility of the holes in Ge nanowires to 254 cm2V-1 · s-1.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 1 )

Date of Publication:

Jan. 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.