Cart (Loading....) | Create Account
Close category search window
 

Fowler-Nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ling, C.H. ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Goh, Y.H. ; Ooi, J.A.

The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ~1014 cm-2, and dominates net charge creation at higher fluence

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 4 )

Date of Publication:

Apr 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.