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Fowler-Nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current

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3 Author(s)
Ling, C.H. ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Goh, Y.H. ; Ooi, J.A.

The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ~1014 cm-2, and dominates net charge creation at higher fluence

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 4 )

Date of Publication:

Apr 1997

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