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Low contact resistance metallization for gigabit scale DRAM's using fully-dry cleaning by Ar/H2 ECR plasma

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5 Author(s)
Taguwa, T. ; ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan ; Urabe, K. ; Sekine, M. ; Yamada, Y.
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A fully-dry cleaning technique with Ar/H2 Electron Cyclotron Resonance (ECR) plasma was developed as a low contact resistance metallization technology for gigabit scale DRAM contacts. By combining with ECR TiN/Ti-CVD, extremely low contact resistances of 296 Ω and 350 Ω for 0.3-μm contact diameter with aspect ratio of 7 were realized on n+ and p+ diffusion layers, respectively. No leakage current was observed. By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical Polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully demonstrated

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 4 )

Date of Publication:

Apr 1997

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