Referenced Items are not available for this document.
A design of an active device on GaAs with a stop-layer under an active structure is proposed. It makes possible to implement effective heat removing through the filled well from the wafer bottom. Simulation has shown doubling of thermal conductance.
Published in:
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Date of Conference: 13-17 Sept. 2010
- Page(s):
- 756
- E-ISBN :
- 978-966-335-334-0
- Print ISBN:
- 978-1-4244-7184-3
- INSPEC Accession Number:
- 11651660
- Conference Location :
- Sevastopol
- Product Type:
- Conference Publications
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