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Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers

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4 Author(s)
Pligovka, A.N. ; Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus ; Luferov, A.N. ; Nosik, R.F. ; Mozalev, A.M.

MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.

Published in:

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Date of Conference:

13-17 Sept. 2010