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We propose new pixel design on emitting area and corresponding shadow mask design for high resolution active-matrix organic light-emitting diodes (AMOLEDs) to overcome the limitation of conventional shadow mask process. The proposed scheme has the extended emitting area into adjacent sub-pixel and gives flexibility for manufacturing shadow mask with quarter resolution compared with conventional requirement. The proposed scheme can use normal pixel driving circuit; however, anode electrode in each sub-pixel covers adjacent pixels to extend its own emitting aperture area for high resolution AMOLEDs. We have successfully implemented this scheme in a 4.3-in-sized WVGA (854 × RGB × 480) AMOLED using p-type advanced-solid phase crystallization (A-SPC) backplane technology and top emissive organic light-emitting diode (OLED) device structure and evaluated key performance characteristics.