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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f_{\tau }/f_{\max } \sim \hbox {430/800} \hbox {GHz}

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12 Author(s)
Jain, V. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Lobisser, E. ; Baraskar, A. ; Thibeault, Brian J.
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Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter-base junctions. At peak RF performance, the device is operating at 30 mW/μm2 with Jc = 18.4 mA/μm2 and Vce = 1.64 V. The devices show a peak DC common-emitter current gain (β) ~ 20 and VBR,CEO = 2.5 V.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 1 )