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Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film Transistors With a \hbox {SiO}_{2} –Silicone Hybrid Gate Dielectric

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4 Author(s)
Lin Han ; Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA ; Yifei Huang ; Sturm, J.C. ; Wagner, S.

We have made self-aligned top-gate coplanar hydrogenated amorphous-silicon (a-Si:H) thin-film transistors using a SiO2-silicone hybrid material as the gate dielectric. The hybrid dielectric layer is 150 nm thick and separates a chromium gate electrode from nickel silicide source and drain. The nickel silicide is formed by rapid thermal reaction of a deposited nickel film with the underlying a-Si:H. The electron field-effect mobility is ~1.0 cm2/V · s, the subthreshold slope is ~380 mV/decade, and the ON/OFF current ratio is ~105. The gate leakage current of ~10 pA across the 150-nm-thick hybrid dielectric is ~1/10 of that observed across the typical 300-nm-thick SiNx dielectric. The whole process needs only two masks.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 1 )

Date of Publication:

Jan. 2011

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