Cart (Loading....) | Create Account
Close category search window

Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film Transistors With a \hbox {SiO}_{2} –Silicone Hybrid Gate Dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lin Han ; Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA ; Yifei Huang ; Sturm, J.C. ; Wagner, S.

We have made self-aligned top-gate coplanar hydrogenated amorphous-silicon (a-Si:H) thin-film transistors using a SiO2-silicone hybrid material as the gate dielectric. The hybrid dielectric layer is 150 nm thick and separates a chromium gate electrode from nickel silicide source and drain. The nickel silicide is formed by rapid thermal reaction of a deposited nickel film with the underlying a-Si:H. The electron field-effect mobility is ~1.0 cm2/V · s, the subthreshold slope is ~380 mV/decade, and the ON/OFF current ratio is ~105. The gate leakage current of ~10 pA across the 150-nm-thick hybrid dielectric is ~1/10 of that observed across the typical 300-nm-thick SiNx dielectric. The whole process needs only two masks.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 1 )

Date of Publication:

Jan. 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.