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{\rm Nd}_{1-{\rm x}}{\rm Fe}_{\rm x}{\rm OF} Thin Films Deposited by Chemical Vapor Deposition and Their Arsenic Diffusion

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3 Author(s)
I. Corrales-Mendoza ; Physics Department, CINVESTAV-IPN, México, D.F., México ; A. Conde-Gallardo ; V. M. Sanchez-Resendiz

By employing Neodymium-hexafluoro-pentanedionate and Iron-pentanedionate as chemical precursors, we are able to grow (Nd,Fe)O1-yF1+2y thin films by aerosol assisted chemical vapor deposition with different Nd:Fe atomic ratios (Nd1-xFex; 0 ≤ x ≤ 1). The X-ray diffraction and energy dispersive experiments, indicate that for compositions of x ≤ 0.5, the as grown films crystallize in the tetragonal off-stoichiometry Nd-oxyfluoride structure (NdO1-yF1+2y, spatial group P4/nmm), while for x >; 0.5 the films develop an amorphous phase. Given that we are able to grow films with x≈0.5, the (Nd,Fe)O1-yF1+2y films with this particular Nd/Fe concentration have been employed in diffusion experiments to try to introduce arsenic and develop the NdFeAsO1-yFy. The preliminary results indicate that the arsenic is not efficiently incorporated into the precursor film; however the diffusion promotes the recrystallization of the as grown films in the stoichiometric Nd1-xFexOF rhombohedral phase (spatial group R-3m). The electrical characterization of those films indicates that most of them are semiconductors.

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:21 ,  Issue: 3 )