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Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

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13 Author(s)
Kataoka, H. ; Dept. of Int. Liberal Arts, Minami Kyushu Junior Coll., Miyazaki, Japan ; Mungkung, N. ; Yuji, T. ; Kawano, M.
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The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.

Published in:

Discharges and Electrical Insulation in Vacuum (ISDEIV), 2010 24th International Symposium on

Date of Conference:

Aug. 30 2010-Sept. 3 2010

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