Cart (Loading....) | Create Account
Close category search window
 

Offset voltage estimation model for latch-type sense amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Woo, S.-H. ; Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea ; Kang, H. ; Park, K. ; Jung, S.-O.

A sense amplifier detects a small signal and amplifies it to produce a large signal. However, a sensing failure may occur owing to the offset voltage caused by the mismatch of paired transistors in the sense amplifier. Since the yield of a sense amplifier is the strong function of the offset voltage, estimation of the offset voltage and its statistical distribution is critical in designing sense amplifiers. As offset voltage can be assumed to follow a Gaussian distribution, its standard deviation (1-sigma, σOS) can be estimated from a simple variance model for paired transistors. However, owing to secondary effects such as differential charge injection, drain-induced barrier lowering and stack effect, σOS estimated using the variance model deviates from that obtained from statistical (Monte-Carlo) simulation, and the deviation becomes larger as technology scales down. This study analyses secondary effects on the offset voltage in the most commonly used latch-type sense amplifiers and suggests novel σOS estimation model. The proposed model, which considers secondary effects, can accurately estimate σOS even when technology scales down. This study also presents the trend of the influence of secondary effects on the offset voltage with technology scaling.

Published in:

Circuits, Devices & Systems, IET  (Volume:4 ,  Issue: 6 )

Date of Publication:

November 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.