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CMOS class-E power amplifier (1.8-GHz) with an additional thin-film technology

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2 Author(s)
Park, C. ; Sch. of Electron. Eng., Soongsil Univ., Seoul, South Korea ; Seo, C.

A 1.8-GHz power amplifier is implemented using the 0.18-μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. An additional thin-film technology on a separate substrate is used to design the output matching network for high efficiency. To minimise the number of bond-wires, a single differential power stage is used. The output matching network was completed with the proposed load impedance transformer and an Metal Insulator Metal (MIM) capacitor using additional thin-film technology. The amplifier achieved a drain efficiency of 50.5 μ at a maximum output power of 31.6 μdBm at 1.81 μGHz.

Published in:

Circuits, Devices & Systems, IET  (Volume:4 ,  Issue: 6 )

Date of Publication:

November 2010

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