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Femtosecond laser-induced self-ordered nanostructures in semiconducting 4H-SiC

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3 Author(s)
Makin, V.S. ; Res. Inst. for Complex Testing of Opto-Electron. Devices, Sosnovy Bor, Russia ; Makin, R.S. ; Silantjeva, I.A.

The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductor's cylindrical rode metallization.

Published in:

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Date of Conference:

12-14 Sept. 2010