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In-doped ZnO single crystals as a novel laser material

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2 Author(s)
L. E. Li ; Institute of Crystallography, RAS, Moscow, Russia ; L. N. Demyanets

As-grown ZnO:In crystalline plates demonstrate strong near-band-edge emission related to exciton recombination (380 nm - free excitons; 395 and 406 nm - excitons localized in the impurity centers). Fabry-Perot mode structure is observed for last two bands. Dramatically increasing narrow line (396 nm, Δλ ~ 3.3 nm) is connected with EHP recombination.

Published in:

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Date of Conference:

12-14 Sept. 2010