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Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si

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1 Author(s)
Rakhshani, A.E. ; Department of Physics, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

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The importance of silicon based optoelectronic devices is due to the well developed silicon technology and its potential for device integration. ZnO/Si light emitting diodes reported in the literature are based mainly on ZnO films grown by the vapor-phase techniques. Electrodeposition, a cost-effective and simple method, has not been explored adequately for the fabrication of such devices. In this study, ZnO films were electrodeposited on the (100) plane of highly B-doped p-Si substrates. Heterojunction devices (p-n and p-i-n) were constructed and characterized by means of current-voltage, capacitance-voltage, photocurrent spectroscopy, photoluminescence, and electroluminescence measurements. Electrodeposition yields compact films with a native donor density ∼1017 cm-3. Diffusion of boron from Si into ZnO, during an annealing process, yields graded p-n junctions with enhanced electroluminescence. Devices exhibit a reasonably good photoresponse in the ultraviolet-blue range. The absorption of subband gap photons in ZnO shows an Urbach tail with a characteristic energy of 115 meV. The absorption and emission of light involves two prominent defect levels in ZnO, namely, L1 and E1.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 9 )