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Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction

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7 Author(s)
Holy, V. ; Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic ; Marti, X. ; Horak, L. ; Caha, O.
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Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the Mn K absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data demonstrate that the rate of the out-diffusion of the Mn interstitials from the Ga tetrahedrons significantly exceeds that from the As tetrahedrons.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 18 )

Date of Publication:

Nov 2010

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