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The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

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11 Author(s)
Jang-Yeon Kwon ; Display Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-712, Republic of Korea ; Ji Sim Jung ; Kyoung Seok Son ; Kwang-Hee Lee
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This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf–In–Zn–O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 18 )