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Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM

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12 Author(s)
Amiri, P.K. ; Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA ; Zeng, Z.M. ; Upadhyaya, P. ; Rowlands, G.
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This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of <;1 pJ for write times of 1-5 ns.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 1 )

Date of Publication:

Jan. 2011

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