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Process Dependence of Proton-Induced Degradation in GaN HEMTs

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8 Author(s)
Roy, T. ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; En Xia Zhang ; Puzyrev, Y.S. ; Fleetwood, D.M.
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The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 6 )

Date of Publication:

Dec. 2010

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