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Large full-well capacity stitched CMOS image sensor for high temperature applications

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5 Author(s)
Durini, D. ; Fraunhofer Inst. for Microelectron. Circuits & Syst. (IMS), Duisburg, Germany ; Matheis, F. ; Nitta, C. ; Brockherde, W.
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A novel CMOS pixel architecture is presented, which fulfills the need for acquisition of very high photon fluxes at high temperatures. A buried photodiode based pixel structure was analysed in detail, and then applied to fabricate the 256 × 256 large area imager sensor in a standard 0.5μm CMOS process using mask reticle stitching.

Published in:

ESSCIRC, 2010 Proceedings of the

Date of Conference:

14-16 Sept. 2010