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A novel CMOS pixel architecture is presented, which fulfills the need for acquisition of very high photon fluxes at high temperatures. A buried photodiode based pixel structure was analysed in detail, and then applied to fabricate the 256 × 256 large area imager sensor in a standard 0.5μm CMOS process using mask reticle stitching.
ESSCIRC, 2010 Proceedings of the
Date of Conference: 14-16 Sept. 2010