By Topic

A temperature compensation word-line voltage generator for multi-level cell NAND Flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
T. Tanzawa ; Japan Flash Design Center, Micron Japan, Ltd. 5-37-1, Kamata, Ota-ku, Tokyo 144-8721, Japan ; T. Tanaka ; S. Tamada ; J. Kishimoto
more authors

A word-line voltage generator is proposed to compensate temperature variations in the threshold voltages of flash memory cells by mixing a first current with a negative temperature coefficient with a second current with zero temperature dependency whose current is adjustable per level per operation. The measured results showed that 1) the output voltage could be adjusted from 0.15V to 2.5V with a resolution of 10mV at 90C, and 2) the temperature coefficient could be adjusted from 0 to -5mV/K with a resolution of -0.04mV/K. Thus, a temperature variation in Vt of the memory cells can be reduced to ±10% with the generator circuit. The generator consumed 500μA and occupied 0.24mm2.

Published in:

ESSCIRC, 2010 Proceedings of the

Date of Conference:

14-16 Sept. 2010