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A 65-nm CMOS temperature-compensated mobility-based frequency reference for Wireless Sensor Networks

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6 Author(s)
Sebastiano, F. ; NXP Semicond., Eindhoven, Netherlands ; Breems, L. ; Makinwa, K. ; Drago, S.
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For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

Published in:

ESSCIRC, 2010 Proceedings of the

Date of Conference:

14-16 Sept. 2010