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Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

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3 Author(s)
Heidecker, J. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Allen, G. ; Sheldon, D.

A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).

Published in:

Radiation Effects Data Workshop (REDW), 2010 IEEE

Date of Conference:

20-23 July 2010