Cart (Loading....) | Create Account
Close category search window

COLK cell : A new embedded DRAM architecture for advanced CMOS nodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Cremer, S. ; STMicroelectronics, Crolles, France ; Goducheau, O. ; Petiton, H. ; Gaillard, S.
more authors

This paper deals with a new and low cost embedded DRAM (eDRAM) architecture. COLK (Capacitor Over Low K) cell with capacitor placed in the first and thick SiO2 dielectric has been successfully integrated. 4Mb eDRAM testchip using this new architecture is functional in 45 nm node and presents good yield. Moreover we succeed to demonstrate the capability to continue downscaling of eDRAM for nodes down to 32 nm and 22nm.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.