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A demonstration of VFB/Vth tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount of oxygen atoms has been controlled by optimized annealing temperature and the thickness of the gate electrode. The shift in VFB has been confirmed irrespective of gate dielectric materials and the thickness. The Vth of pMOSFET can be controlled to positive direction by 520 mV without any EOT penalty. Once a shift in VFB/Vth is obtained, the values are found to be stable even after following forming gas annealing.