Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Current distributions of BJT-based decoding array for Phase Change Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ventrice, D. ; Technol. Dev., Numonyx, Agrate Brianza, Italy ; Calderoni, A. ; Fantini, P.

Phase Change Memory (PCM) is today demonstrating to be one of the mainstream memories for the next decade. In particular, the PCM technology based on BJT array for the storage cells decoding appears the mainstream architectural approach in order to keep both compact the cell layout and provide the proper amount of programming current. In this scenario, the present work investigates the electrical spreads of the BJT decoding arrays in 45 nm technology presented in ref. for both the readout and programming conditions. A detailed experimental investigation, together with SPICE-like Monte Carlo simulations, are used to assess the sources of current variability allowing a better control of the BJT-based decoding current distributions.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010