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Phase Change Memory (PCM) is today demonstrating to be one of the mainstream memories for the next decade. In particular, the PCM technology based on BJT array for the storage cells decoding appears the mainstream architectural approach in order to keep both compact the cell layout and provide the proper amount of programming current. In this scenario, the present work investigates the electrical spreads of the BJT decoding arrays in 45 nm technology presented in ref. for both the readout and programming conditions. A detailed experimental investigation, together with SPICE-like Monte Carlo simulations, are used to assess the sources of current variability allowing a better control of the BJT-based decoding current distributions.