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The following topics are dealt with: Moore devices; reliability; SRAM and DRAM; alternative FETs; SOI MOSFETs; ferromagnetic and polycrystalline devices; simulation of advanced silicon devices; photodetectors; gallium nitride power devices; modeling of temperature and stress impacts; phase change memories; leakage current and traps; tunneling FET devices; nanowire transistors; device steep slop and leakage; channel and gate stack engineering; simulation of III/V devices; charge trap NAND flash; and electromechanical devices.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010