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GaN-on-Si technology, a new approach for advanced devices in energy and communications

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4 Author(s)
Chung, J.W. ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Ryu, K. ; Lu, B. ; Palacios, T.

The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si substrates allow the on-chip heterogeneous integration of GaN and Si electronics. Second, the easy removal of the Si substrate through dry or wet etching gives access to the N-face of the GaN layer, and all the new device structures that this orientation enables. Finally, the use of Si substrates for the growth of GaN high voltage switches makes the cost of these devices competitive with Si devices, and the total or partial etch of Si brings a new degree of freedom to increase the breakdown and performance of GaN transistors.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010