Cart (Loading....) | Create Account
Close category search window
 

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Carrè€re, J.P. ; R&D Technol. Dept., STMicroelectronics, Crolles, France ; Oddou, J.P. ; Richard, C. ; Jenny, C.
more authors

A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers between the photodiode and the plasma become thinner. This can be explained by a photo generation phenomenon in the dielectric nitride layer, induced by the plasma UV, and assisted by the wafer surface charge. This mechanism leads to a positive fix charge creation on the pixel surface, which can next deplete the top P layer of the pinched photodiode. Process and pixel architecture optimization ways are finally proposed.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.