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Device-wafer bonding provides a platform for the implementation of ultra-high-efficiency multijunction solar cell designs, by allowing optimal subcell bandgap combinations to be attained while using only high-quality materials lattice-matched to their growth substrates. One promising new method for achieving wafer bonding is to use carbon nanotube composite thin films as the bonding agent between subcells grown on dissimilar substrates. In this paper we present the first demonstration of CNT-composite bonding of III-V materials, and evaluate its suitability for solar-cell integration in terms of optical transparency, electrical conductivity, bond uniformity and robustness, and bonded-device electrical performance. Another, relatively more mature method for device-wafer integration is that of direct semiconductor bonding technology. In order to provide a basis for comparison with CNT-bonding, we also summarize the latest achievements of the SBT solar cell development effort at Spectrolab.