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The high frequency plasma enhanced chemical vapor deposition (HF-PECVD) is a well applicable deposition technique for large area and high rate deposition for silicon thin film solar cell application. This paper presents the properties of hydrogenated amorphous silicon (a-Si:H) films and high efficiency of p-i-n solar cells prepared using RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells using pure silane on the properties of the films and solar cells are investigated. We summarize the power and pressure effect on properties and growth mechanism of a-Si:H films. It was found that the a-Si:H films prepared under various deposition conditions show widely various deposition rate, optical-electronic properties and microstructure. AZO films between two layers (n-layer and metal), the AZO back reflector was successfully implemented in a-Si:H singlejunction solar cells. After optimizing the deposition parameters, the amorphous silicon based thin film silicon solar cells with efficiency of 9.15 % have been fabricated by HF-PECVD. These are very encouraging results for future fabrication of high efficiency thin film solar cells using by HF-PECVD.
Date of Conference: 20-25 June 2010