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Reduction of light induced degradation (LID) in B-doped Cz-Si solar cells by SiH4-free SiCxNy film

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6 Author(s)
Kang, M.H. ; Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA ; Hong, J. ; Ebong, A. ; Rounsaville, B.
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Boron doped Czochralski (Cz) silicon solar cells undergo efficiency degradation under illumination. The light induced degradation (LID) is related to the formation of Bs-O2i complexes which act as a strong recombination centers. This paper shows that carbon present inside the SiCxNy films deposited from polymer solid or liquid source reduce the LID in boron doped Cz solar cells. The in situ grown carbon in the antireflection (AR) films provides a source of additional carbon which gets incorporated into the bulk silicon (Si) during the cell processing. This carbon competes with boron to form a carbon-oxygen related complex and reduces the Bs-O2i concentration and the associated LID compared to conventional SiNx coated solar cells. SiCxNy coated solar cells showed 0.1% loss in absolute efficiency due to LID relative to 0.3% degradation in the counterpart SiNx coated solar cells on 2 Ω-cm boron doped Cz material.

Published in:

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Date of Conference:

20-25 June 2010