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This paper proposes a method for estimating the amount of electromagnetic incident power on the surface of a semiconductor sample, delivered by the front-end module used to investigate the ratchet effect in two-dimensional electron gas system under microwave radiation. The proposed approach, based on intensive full-wave electromagnetic simulations, allows us to establish a simple formula to compute the incident power at the surface sample. The described method is validated using indirect measurements.
Microwave Conference (EuMC), 2010 European
Date of Conference: 28-30 Sept. 2010