By Topic

Power handling of temperature-stable thin-film RF MEMS capacitive switches

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mahameed, R. ; Electr. & Comput. Eng. Dept., Univ. of California at San Diego, La Jolla, CA, USA ; Rebeiz, G.M.

This work presents the power handling analysis and measurements of a temperature-stable thin film RF MEMS capacitive switch. The switch demonstrates a very low sensitivity to temperature with a pull-down voltage variation of <;50 mV/°C. Power handling simulations and measurements are also presented up to 1.3 W.

Published in:

Microwave Conference (EuMC), 2010 European

Date of Conference:

28-30 Sept. 2010