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High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

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3 Author(s)
Morkner, Henrik ; Fujii, K. ; Ostermann, B.

The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of - 52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

Published in:
Microwave Conference (EuMC), 2010 European

Date of Conference: 28-30 Sept. 2010

Page(s):
1654 - 1657
Print ISBN:
978-1-4244-7232-1
INSPEC Accession Number:
11628111
Conference Location :
Paris

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