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The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of - 52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.
Microwave Conference (EuMC), 2010 European
Date of Conference: 28-30 Sept. 2010