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Fabrication of 100 layer-stacked InAs/GaNAs strain-compensated quantum dots on GaAs (001) for application to intermediate band solar cell

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5 Author(s)
Takata, A. ; Sch. of Eng., Univ. of Tokyo, Tokyo, Japan ; Oshima, R. ; Shoji, Yasushi ; Akahane, K.
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In order to demonstrate the predicted high efficiency operation of a quantum dot intermediate band solar cell (QD-IBSC), high-density QD superlattice with good size homogeneity is required. Though multiple stacking is one promising way to increase the total QD density thereby increasing the optical absorption by QD-IB, it is difficult to maintain the size homogeneity and structural quality of QD superlattice. For this, we take advantage of strain-compensation growth technique, in which the compressive strain induced by each InAs QD layer is compensated, or balanced out, by embedding it with a tensile-strained GaNAs strain-compensating layer. In this work, we demonstrate a high quality growth of up to 100 layer-stacked InAs/GaNAs QD superlattice on GaAs (001) substrate. We have also characterized some basic solar cell characteristics.

Published in:

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Date of Conference:

20-25 June 2010