By Topic

Aluminum doped hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD for p-type window layer of silicon based thin-film solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hamashita, D. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan ; Miyajima, S. ; Yamada, A. ; Konagai, M.

Aluminum doped (Al-doped) p-type nc-3C-SiC:H films were successfully depsoited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at a low substrate temperature of about 360°C using dimethylaluminum hydride (DMAH) as an Al dopant. Dark conductivity and activation energy of the films were strongly influenced by H2/MMS gas flow ratio. A dark conductivity of a 27-nm-thick film was improved from 1.5×10-5 to 6.9×10-4 S/cm by changing H2/MMS gas flow ratio from 6.4×103 to 8.5×103. Activation energy was found to be 265 meV for the optimized Al-doped nc-3C-SiC:H. Clear rectifying characteristics of J-V characteristics of Al-doped nc-3C-SiC:H / n-type c-Si heterojunction diodes confirmed the p-type nature of Al-doped nc-3C-SiC:H. These result indicates that Al-doped nc-3C-SiC:H is promising for p-type window layer of a top cell of multi-junction silicon-based thin-film solar cells.

Published in:

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Date of Conference:

20-25 June 2010