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Evaluation of RTD-CMOS Logic Gates

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3 Author(s)
Nunez, J. ; Centro Nac. de Microelectron., Univ. de Sevilla, Sevilla, Spain ; Avedillo, M.J. ; Quintana, J.M.

The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. This paper compares RTD-CMOS and pure CMOS realizations of a set of logic gates which can be operated in a gate-level nanopipelined fashion, thus allows estimating logic networks operating frequency. Lower power-delay products are obtained for RTD/CMOS implementations.

Published in:

Digital System Design: Architectures, Methods and Tools (DSD), 2010 13th Euromicro Conference on

Date of Conference:

1-3 Sept. 2010