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A low-power COMS low noise amlifier for UWB applications

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2 Author(s)
Chang-Hsi Wu ; Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan ; Yu-Po Lin

A 3-5GHz CMOS low noise amplifier (LNA) for ultra wide band (UWB) receiver based on CMOS 0.18μm process is presented in this paper. To achieve low-power consumption and low noise, the proposed LNA employs current-reused technique via a PMOS cascade stage. The LNA provides a maximum forward gain (S21) of 11dB while drawing 6mW from 1.2-V supply voltage. The LNA achieves 2.6-3.9dB noise figure (NF) in the frequency range of 3-5GHz. The measured Pin-1dB and IIP3 of the proposed LNA are -16 and -3dBm, respectively. The size of the chip is 0.95mm × 0.77mm.

Published in:

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on  (Volume:2 )

Date of Conference:

20-23 Sept. 2010

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