By Topic

Metal induced crystallization of amorphous silicon using layer-by-layer technique with gold ultra thin layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Aono, Masami ; Dept. of Mater. Sci. & Eng., Nat. Defense Acad., Yokosuka, Japan ; Takiguchi, H. ; Endo, T. ; Okamoto, Y.
more authors

Multilayered films composed of amorphous silicon (a-Si) layer and ultra thin gold layer were prepared for getting polycrystalline silicon (poly-Si) with high crystallization in a short time by metal induced crystallization (MIC) method. Deposition method of the multilayered films was a combination of ion beam evaporation and layer-by-layer technique. We prepared samples with different Au layer thickness of 0.2, 0.4, and 0.8 nm, respectively. The number of a-Si/Au cycle was 50. The samples were annealed at 473, 673, and 873 K for crystallization of a-Si layer. Crystal structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. Electrical properties were discussed from the resistivity depending on the annealing temperatures. Optical absorbance was measured by UV-visible transmittance spectroscopy. The crystallization of a-Si occurred at low annealing temperature in thicker Au layer films. However, the crystalline volume fraction of a-Si reached to the maximum value when the annealing temperature was 673 K and the Au layer thickness was 0.4 nm. Metallic conductivity was shown in the annealed film of 0.8 nm Au layer thickness. In addition, we found that Au atoms formed nanoparticles in the films by thermal annealing, and a typical peak of surface plasmon by Au nanoparticles observed in the optical absorption spectra.

Published in:

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Date of Conference:

20-25 June 2010