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High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15 GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

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3 Author(s)
Morkner, Henrik ; Wireless Semicond. Div., Avago Technol., San Jose, CA, USA ; Fujii, K. ; Ostermann, B.

The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of -52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

Published in:

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Date of Conference:

27-28 Sept. 2010