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The design and characterization of CMOS compatible medium voltage LDMOS transistors are presented. Devices of different sizes were fabricated in a 0.25 μm BiCMOS technology and were characterized in the most important wireless telecommunication bands up to 5.8 GHz using a load/source pull measurement setup. Alternative layouts with regards to device geometry and stabilizing networks were investigated. Some of the transistors were equipped with on-chip stability networks to guarantee safe operation over the whole frequency band. This is shown to be established without substantial performance degradation. The medium size 1.8 mm device shows state-of-the-art performance over bandwidth with peak drain efficiencies of 51%, 44% at 2.66 GHz, 5.8 GHz providing a saturated output power of 30.1 dBm, 29.7 dBm. The linearity performance at all bands was investigated by determining the adjacent channel power ratio for a WCDMA test signal. The excellent RF performance achieved is verified in a real design by means of a hybrid class-AB power amplifier operating at 5.8 GHz.
Date of Conference: 27-28 Sept. 2010