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This paper presents a very low-power (3mW, 3.9mW) and high-speed (3GS/s, 5GS/s) flash ADC in a deep sub-micron CMOS technology. To save power and area, unnecessary building blocks of ADC are excluded. Optimization of comparator has been fully analyzed to reduce random offsets due to process scaling. Fabricated in 90nm CMOS, the experimental results demonstrate that the ADC occupying 0.0108mm2 active area achieves an effective resolution bandwidth (ERBW) of 1.25GHz and figure-of-merit (FOM) of 0.35pJ/conversion-step. The peak differential non-linearity (DNL) and integral non-linearity (INL) are 0.4LSB. The results obtained in this work is used to satisfy the stringent power requirement of a wireless mixed-signal receiver, specifically suitable for multi-gigabit amplitude shift keying (ASK) and binary phase shift keying (BPSK) demodulations.