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Turn-Around Effect of V_{\rm th} Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox {HfO}_{x}\hbox {N}_{y} Gate Dielectrics

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12 Author(s)
Hyung-Suk Jung ; World Class University Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea ; Sang-Ho Rha ; Hyo Kyeom Kim ; Jeong Hwan Kim
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This letter examines the turn-around effect of a threshold voltage (Vth) shift of an n-type transistor with atomic-layer-deposited HfOxNy gate dielectrics under a positive gate bias. Vth shifted to the positive voltage direction during the first second due to electron trapping at the preexisting trap sites in the gate dielectrics, which then shifted to the negative voltage direction. This turn-around effect was attributed to hole trapping originating from the generation of electron-hole pairs by the surface plasmon or impact ionization.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 12 )