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Resonance detection of terahertz radiation in nanometer field-effect transistors with two-dimensional electron gas

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11 Author(s)
Maremyanin, K.V. ; Inst. for the Phys. of Microstructures, RAS, Nizhni Novgorod, Russia ; Gavrilenko, V.I. ; Morozov, S.V. ; Ermolaev, D.M.
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Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.

Published in:

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Date of Conference:

5-10 Sept. 2010

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