Referenced Items are not available for this document.
Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.
Published in:
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Date of Conference: 5-10 Sept. 2010
- Page(s):
- 1 - 2
- Print ISBN:
- 978-1-4244-6655-9
- INSPEC Accession Number:
- 11624023
- Conference Location :
- Rome
- Digital Object Identifier :
- 10.1109/ICIMW.2010.5613007
- Product Type:
- Conference Publications
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