Cart (Loading....) | Create Account
Close category search window

Resonance detection of terahertz radiation in nanometer field-effect transistors with two-dimensional electron gas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Maremyanin, K.V. ; Inst. for the Phys. of Microstructures, RAS, Nizhni Novgorod, Russia ; Gavrilenko, V.I. ; Morozov, S.V. ; Ermolaev, D.M.
more authors

Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.

Published in:

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Date of Conference:

5-10 Sept. 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.